A Resistorless CMOS Non-Bandgap Voltage Reference
نویسندگان
چکیده
A resistorless CMOS nonbandgap voltage reference, which is compatible with 180nm CMOS Technology is presented in this paper. In order to reduce the temperature nonlinearity in proposed voltage reference, threshold voltage and a proportional to absolutely temperature (PTAT) voltage form the basic linear temperature components, which are achieved by resistorless threshold voltage extractor and differential difference amplifier. Besides, a self-biased current source is used to provide stable bias currents for the whole voltage reference, which can improve the power-supply noise attenuation (PSNA). Verification results of the proposed voltage reference simulated with 180nm CMOS technology demonstrate that the temperature coefficient (TC) of 10.5ppm/C with a temperature range of -20C to 80C is obtained at 1.8V power supply, and a PSNA of 86.2dB is achieved without any filtering capacitor while dissipating a maximum supply current of 22mA. The active area is 48.685mm47.645mm.
منابع مشابه
Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references
A novel resistorless bipolar junction transistor (BJT) bias and curvature compensation circuit for ultra-low power CMOS bandgap voltage references (BGR) is introduced. It works in the nano-ampere current consumption range and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a 0.18 μm CMOS standard process are analysed. A junction voltage...
متن کامل0 . 7 V Supply , 8 nW
In this work a new resistorless sub-bandgap voltage reference topology is presented. It is a self-biased and small area circuit that works in the nano-ampere consumption range, and under 1 V of power supply. The behavior of the circuit is analitically described, a design methodology is proposed and simulation results are presented for a standard 0.18 μm CMOS process. A reference voltage of 463 ...
متن کاملESD Protected Bandgap Reference Voltage Chip
Bandgap Reference voltage chip is implemented in 0.25μm CMOS technology with ESD protection. This chip can be designed by using a layout tool micro wind 3.1.7 version. The chip circuit generates a reference voltage of 1.23 V. It can operate between 20oC & 70oC temperature. Band gap core produces a voltage that is insensitive to variation in temperature. It has a unique protection with respect t...
متن کاملCmos Bandgap Voltage Reference
This paper presents an example of the CMOS bandgap voltage reference design. Proposed circuit is evaluated with a set of simulations. Simulation results show the circuit performance. Circuit exhibits the nominal temperature coefficient of 6 ppm/°C, and dc power supply rejection of 130 dB.
متن کاملSub 1 V CMOS bandgap reference design techniques: a survey
This paper presents a review of constraints, limitation factors and challenges to implement sub 1 V CMOS bandgap voltage reference (BVR) circuits in today’s and future submicron technology. Moreover, we provide insight analysis of BVR circuit architectures a designer can relay upon when building CMOS voltage reference.
متن کامل